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Adoption of MBIT process.
High DC current gain (hFE=800 to 3200).
Large current capacity (IC=0.7A).
Low collector-to-emitter saturation voltage
(VCE(sat)0.5V).
High VEBO (VEBO15V).

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µ¬¡¡³Ê¡¡¡¡¡¡VCBO:30V,VCEO:25V,VEBO:15V,IC:0.7A,PC:0.6W
hFE=800to3200
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